Dr. Julien Brault (CNRS-CRHEA-Côte d'Azur Univ., France)

Investigation of AlGaN Heterostructures Grown on h-BN by Molecular Beam Epitaxy for the Fabrication of Deep UV LEDs

Prof. Mitsuru Funato (Kyoto Univ., Japan)

Recent Progress of Three-dimensional Structure-controlled InGaN Light Emitters for Tailored Visible Spectral Control

Prof. Hideki Hirayama (RIKEN, Japan)

Efficiency Increase in 220-230 nm Far-UVC LEDs and 200 mW Class 230 nm Power LED Module Grown on c-Sapphire

Dr. Hee Jin Kim (Lumileds LLC, USA)

Latest Advances in Green and Red InGaN LEDs

Prof. Dong-Seon Lee (GIST, Korea)

Study on Various GaN Growth Modes on Graphene and Their Mechanism

Prof. Bin Liu (Nanjing Univ., China)

Progress and Challenges in GaN based High Efficiency RGB Micro-LEDs for Comprehensive Applications

Prof. Zhiqiang Liu (Chinese Academy of Sciences, China)

Interface Physics of Nitrides Growth

Prof. Hideto Miyake (Mie Univ., Japan)

Deep-UV LEDs Fabricated on Face-to-Face Annealed Sputter-Deposited AlN Templates

Dr. Myeongseok Oh (Photon Wave Co., Ltd., Korea)

Development of Deep UV LED from 230nm to 340nm in Photon Wave

Prof. Dong-Soo Shin (Hanyang Univ., Korea)

Performance Analysis of Micro-Sized Light-Emitting Diodes

Prof. Lai Wang (Tsinghua Univ., China)

Ultrasmall Blue, Green and Red InGaN Micro-LEDs

Prof. Takao Oto (Yamagata Univ., Japan)

Improvement of Emission Efficiency and Optical Functionality for Visible Light Region by Designing InGaN-based Periodic Nanostructures

Prof. Joel T. Asubar (Fukui Univ., Japan)

High Performance Normally-off GaN-based HEMTs achieved with Recessed and Regrown Channel Structures

Dr. Julien Buckley (CEA-LETI, France)

GaN and Wide-Bandgap Semiconductor Devices for Power Electronics Applications

Dr. Mengyuan Hua (Southern Univ. of Science and Tech., China)

GaN-based p-channel Devices on High-electron-mobility Transistors (HEMT) Platform

Prof. Hyun-Seop Kim (Kunsan Nat'l Univ., Korea)

Dynamic Ron and Buffer Trapping Mechanisms in AlGaN/GaN HEMTs

Prof. Siyang Liu (Southeast Univ., China)

Recent Progress of  GaN Power Intergation and Modeling Technology

Dr. Jin Wei (Peking Univ., China)

Extending GaN Power Devices for Higher Voltages and Higher Frequencies

Prof. Zenji Yatabe (Kumamoto Univ., Japan)

GaN-based MIS Devices with Mist Chemical Vapor Deposited Gate Insulator

Dr. Feng Zhou (Nanjing Univ., China)

Irradiation-Hardened Gallium Nitride Power Devices for Aerospace Electronic Systems

Prof. Qi Zhou (Univ. of Electronic Science and Tech. of China, China)

Advanced Fabrication Technique and Novel Device Structure for High-Performance Enhancement-Mode GaN p-MISFET

Prof. Celesta Soyeon Chang (Seoul Nat'l Univ., Korea)

Unwanted Ga₂O₃ Phases in Thin Epitaxial Films and How to Prevent Them

Prof. Flyura Djurabekova (Univ. of Helsinki, Finland)

Atom-level Mechanisms of Exceptional Radiation Resistance of Ga₂O₃

Prof. Shizuo Fujita (Kyoto Univ. / Nagoya Univ., Japan)

Recent Efforts for Commercial Applications of Ga₂O₃

Prof. Kentaro Kaneko (Ritsumeikan Univ., Japan)

Potential of Germanium Dioxide (GeO₂) for Power Devices

Prof. Andrej Kuznetsov (Univ. of Oslo, Norway)

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Prof. Jungwook Min (Kumoh Nat'l Inst. of Tech., Korea)

Gallium Oxides Growth Study for Optoelectronic Device Applications

Dr. Ji-Hyeon Park (KICET, Korea)

Heteroepitaxial growth of β-Ga₂O₃ Thin Films on Sapphire Substrates by MOCVD

Prof. Man Hoi WONG (The Hong Kong Univ. of Science and Tech., Hong Kong)

Putting the Pieces Together for Gallium Oxide Power Devices

Prof. Si-Young Bae (Pukyong Nat’l Univ., Korea)

Temperature-Controlled Growth of β-Ga₂O₃ Single Crystals by Edge- Defined Film-Fed Growth Method

Prof. Yiyun Zhang (Chinese Academy of Sciences, China)

Beta-Gallium Oxide Nanowire-based Electronic Devices

Prof. Junlei Zhao (Southern Univ. of Science and Tech., China)

Machine-Learning Dynamic Model of Complex Ga₂O₃ Polymorphs for Next-Generation Extreme Environment Electronics

Prof. Shunta Harada (Nagoya Univ., Japan)

Defect Characterization of Power Device Semiconductor Wafers by Novel Birefringence Method

Prof. Soon-Ku Hong (Chungnam Nat'l Univ., Korea)

New Investigations of Carrot Defects and Prismatic Stacking Faults in 4H-SiC Epitaxial Layers

Prof. Masashi Kato (Nagoya Inst. of Tech., Japan)

Technologies to Suppress Stacking Fault Expansion in SiC Devices

Dr. Chunjun Liu (TankeBlue Inc., China)

Recent Research Progress in 200mm SiC Substrate and Epi Material

Dr. Moonkyong Na (KERI, Korea)

Minority Carrier Lifetime Mapping of Stacking Faults on Photoluminescence Maps from 4H-SiC Epitaxial Wafer by Time-Resolved Photoluminescence

Dr. Navab Singh (Inst. of Microelectronics, A*STAR, Singapore)

Silicon Carbide Technology at IME/A*STAR Singapore

President William Wu (ACME Inc., Taiwan)

Development of High Purity SiC Materials

Prof. Sang Won Yoon (Seoul Nat'l Univ., Korea)

Packaging Approaches for Wide Bandgap Power Semiconductors: Challenges and Efforts

Prof. Jonghwan Kim (POSTECH, Korea)

Probing Deep-ultraviolet Optoelectronic Processes in Hexagonal Boron Nitride

Prof. Young Duck Kim (Kyung Hee Univ., Korea)

Manipulation of Carbon Color Centers in Hexagonal Boron Nitride for Efficient Deep Utraviolet Light Emission

Dr. Seokho Moon (POSTECH, Korea)

The Growth of Hexagonal Boron Nitride on III-Nitrides Substrates by Metal-Organic Chemical Vapor Deposition

Prof. Hyeon Suk Shin (Sungkyunkwan Univ., Korea)

Current Status and Challenges in hBN Growth by Chemical Vapor Deposition

Dr. Hyowon Moon (KIST, Korea)

Defect Engineering for Quantum Emissions in Hexagonal Boron Nitride

Prof. Ki Kang Kim (Sungkyunkwan Univ., Korea)

Recent Progress on Wafer-scaled Monolayer Hexagonal Boron Nitride Synthesis

Prof. Soo Min Kim (Sookmyung Women's Univ., Korea)

Revolutionizing Wafer-Scale Performance based on h-BN

Prof. Jocelyn Achard (LSPM-CNRS, Univ. Sorbonne Paris Nord, France)

Status of CVD Diamond Growth and Engineering for High-End Applications

Dr. Seong-Woo Kim (Orbray Co., Ltd., Japan)

Two-Inch High Quality Diamond Heteroepitaxial Growth on Sapphire Substrate

Dr. Tokuyuki Teraji (Nat'l Inst. for Materials Science (NIMS), Japan)

Diamond Growth and Characterization for Quantum Sensors

Prof. Norio Tokuda (Kanazawa Univ., Japan)

Recent Advances in Diamond MOSFET Technologies

Prof. Hong-Xing Wang (Xian Jiaotong Univ., China)

Recent Progress in Diamond Semiconductors

Prof. Okhyun Nam (Tech Univ. of Korea, Korea)

Diamond Growth on the Heteroepitaxial Diamond Substrate for Future Power and Quantum Device Applications

Prof. Hiroki Morishita (Tohoku Univ., Japan)

Electrical Detection of NV Quantum Sensor

Prof. Sangwon Oh (Ajou Univ., Korea)

Enhancing Magnetic Field Sensitivity in a Solid-state Quantum Sensor

Dr. Takeshi Ohshima (Nat'l Inst. for Quantum Science and Tech., Japan)

Quantum Sensing based on Silicon Vacancy in SiC toward Diagnosis Tool for SiC Power Devices

Prof. Hosung Seo (Sungkyunkwan Univ., Korea)

The Impact of Paramagnetic Defects on the Performance of Quantum Devices in Diamond

Prof. Ya Wang (Univ. of Science & Tech. of China, China)

Diamond Vacancies: Engineering, Quantum Control and Applications

Dr. Dongyeon Kang (KIST, Korea)

Spin-photon Hybrid Quantum System based on Nitrogen Vacancy Center in Diamond