Keynote Speakers

Symposium GL: III-N Materials and Lighting Devices

III-Nitrides for MicroLED and Laser Devices for Display, Communication and Quantum Computing

  • Prof. Steven DenBaars

    Univ. of California Santa Barbara, USA

High-Power InGaN-Based Red Micro-LEDs and Their Potential to Lasers

  • Prof. Kazuhiro Ohkawa

    KAUST, Saudi Arabia

ZOGAN LED: Breakthrough for MicroLED Displays

  • Dr. Yungryel Ryu

    ZOGAN SEMI / KOPTI, Korea

Symposium GE: III-N Materials and Electronic Devices

Wide/Ultrawide Bandgap Next Generation RF and Power Devices

  • Prof. Matin Kuball

    Bristol Univ., UK

The Progress and Development of GaN-based Devices and Integrated Circuits

  • Prof. Ching Ting Lee

    Nat’l Cheng Kung Univ., Taiwan

Advanced GaN HEMTs Epitaxy, Terahertz Characterization and Applications

  • Prof. Vanya Darakchieva

    Lund Univ. / Linköping Univ., Sweden

Controlling Interface States in GaN Power Transistors

  • Prof. Tamotsu Hashizume

    Nagoya Univ., Japan

Thin Film Diamond Integration for Enhanced Thermal Management in Electronics

  • Prof. Srabanti Chowdhury

    Standford Univ., USA

Symposium GaO: Ga2O3 Materials and Electronic Devices

Demand and Technology Development Trends for Vehicle Power Semiconductors

  • Dr. YoungKyun Jung

    Hyundai Motor Company, Korea

Ultra-Wide Bandgap β-Ga2O3 and β-(AlxGa1-x)2O3 Single Crystals and Their Physical Properties

  • Dr. Zbigniew Galazka

    Leibniz Inst. for Crystal Growth, Gemany

Symposium SiC: SiC Materials and Devices

Review of Resnac SiC Epitaxial Wafers for Power Devices

  • Dr. Hiroshi Kanazawa

    Resonac Corp., Japan

Special Session: BN Materials and Devices

The Optical Properties of Various Polytypes of sp2-bonded Boron Nitride

  • Prof. Bernard Gil

    CNRS-Univ. of Montpellier, France

Special Session: Diamond Materials and Devices

Diamond RF Planar and Power Vertical p-FET Using 2D Hole Gas

  • Prof. Hiroshi Kawarada

    Waseda Univ., Japan