III-Nitrides for MicroLED and Laser Devices for Display, Communication and Quantum Computing

• Prof. Steven DenBaars

  Univ. of California Santa Barbara, USA

Nitrides for Micro-Photonics

• Prof. Andreas Waag

  TU Braunschweig, Germany

High-Power InGaN-Based Red Micro-LEDs and Their Potential to Lasers

• Prof. Kazuhiro Ohkawa

  KAUST, Saudi Arabia

ZOGAN LED: Breakthrough for MicroLED Displays

• Dr. Yungryel Ryu

  ZOGAN SEMI / KOPTI, Korea

Wide/Ultrawide Bandgap Next Generation RF and Power Devices

• Prof. Matin Kuball

  Bristol Univ., UK

The Progress and Development of GaN-based Devices and Integrated Circuits

• Prof. Ching Ting Lee

  Nat'l Chen Kung Univ., Taiwan

Advanced GaN HEMTs Epitaxy, Terahertz Characterization and Applications

• Prof. Vanya Darakchieva

  Lund Univ./Linköping Univ., Sweden

Controlling Interface States in GaN Power Transistors

• Prof. Tamotsu Hashizume

  Nagoya Univ., Japan

Thin Film Diamond Integration for Enhanced Thermal Management in Electronics

• Prof. Srabanti Chowdhury

  Standford Univ., USA

Demand and Technology Development Trends for Vehicle Power Semiconductors

• Dr. YoungKyun Jung

  Hyundai Motor Company, Korea

Ultra-Wide Bandgap β-Ga₂O₃ and β-(AlxGa_1-x)₂O₃ Single Crystals and Their Physical Properties

• Dr. Zbigniew Galazka

  Leibniz Inst. for Crystal Growth, Gemany

Review of Resnac SiC Epitaxial Wafers for Power Devices

• Dr. Hiroshi Kanazawa

  Resonac Corporation, Japan

The Optical Properties of Various Polytypes of sp²-bonded Boron Nitride

• Prof. Bernard Gil

  CNRS-Univ. of Montpellier, France

Diamond RF Planar and Power Vertical p-FET Using 2D Hole Gas

• Prof. Hiroshi Kawarada

  Waseda University, Japan