III-Nitrides for MicroLED and Laser Devices for Display, Communication and Quantum Computing
Prof. Steven DenBaars
Univ. of California Santa Barbara, USA
High-Power InGaN-Based Red Micro-LEDs and Their Potential to Lasers
Prof. Kazuhiro Ohkawa
KAUST, Saudi Arabia
ZOGAN LED: Breakthrough for MicroLED Displays
Dr. Yungryel Ryu
ZOGAN SEMI / KOPTI, Korea
Wide/Ultrawide Bandgap Next Generation RF and Power Devices
Prof. Matin Kuball
Bristol Univ., UK
The Progress and Development of GaN-based Devices and Integrated Circuits
Prof. Ching Ting Lee
Nat’l Cheng Kung Univ., Taiwan
Advanced GaN HEMTs Epitaxy, Terahertz Characterization and Applications
Prof. Vanya Darakchieva
Lund Univ. / Linköping Univ., Sweden
Controlling Interface States in GaN Power Transistors
Prof. Tamotsu Hashizume
Nagoya Univ., Japan
Thin Film Diamond Integration for Enhanced Thermal Management in Electronics
Prof. Srabanti Chowdhury
Standford Univ., USA
Demand and Technology Development Trends for Vehicle Power Semiconductors
Dr. YoungKyun Jung
Hyundai Motor Company, Korea
Ultra-Wide Bandgap β-Ga2O3 and β-(AlxGa1-x)2O3 Single Crystals and Their Physical Properties
Dr. Zbigniew Galazka
Leibniz Inst. for Crystal Growth, Gemany
Review of Resnac SiC Epitaxial Wafers for Power Devices
Dr. Hiroshi Kanazawa
Resonac Corp., Japan
The Optical Properties of Various Polytypes of sp2-bonded Boron Nitride
Prof. Bernard Gil
CNRS-Univ. of Montpellier, France
Diamond RF Planar and Power Vertical p-FET Using 2D Hole Gas
Prof. Hiroshi Kawarada
Waseda Univ., Japan